| PART |
Description |
Maker |
| SUD06N10-225L |
N-Channel 100-V (D-S) 175C MOSFET
|
VISAY[Vishay Siliconix]
|
| SUP90N10-09 |
N-Channel 100-V (D-S) 175C MOSFET
N-Channel 100-V (D-S) 175 Degree Celcious MOSFET
|
VISAY[Vishay Siliconix]
|
| SUD19P06-60L |
P-Channel 60-V (D-S) 175C MOSFET P通道60 - V（下局副局长）175C MOSFET
|
VAISH[Vaishali Semiconductor]
|
| SUD50M02-12P SUD50N02-12P |
N-Channel 20-V (D0S) 175C MOSFET
N-Channel 20-V (D-S) 175-LC MOSFET
N - CHANNEL 20 - V ( D -S ) 175C MOSFET
|
VISAY[Vishay Siliconix]
|
| APT20M22LVFR APT20M22LVFRG |
Power FREDFET; Package: TO-264 [L]; ID (A): 100; RDS(on) (Ohms): 0.022; BVDSS (V): 200; 100 A, 200 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 100A 0.022 Ohm
|
Microsemi, Corp.
Advanced Power Technology
|
| APT5010LLC APT5010B2LC APT5010B2LC-06 |
47 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS VI 500V 47A 0.100 Ohm
|
Advanced Power Technolo...
Advanced Power Technology Ltd.
|
| APT6010JFLL |
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
POWER MOS 7 600V 47A 0.100 Ohm
|
Advanced Power Technology
|
| APT5010JLC |
POWER MOS VI 500V 44A 0.100 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technology Ltd.
|
| SUD08P06-155L |
P-Channel 60-V (D-S) 175C MOSFET
|
Vishay Siliconix
|
